Common use of NAND Flash Memory Products Clause in Contracts

NAND Flash Memory Products. Section 3.2(a)(i) Non-Defaulting Party Section 6.12(d) Non-Engineer SanDisk Team Members Section 6.10(b)(ii) Non-Investing Party Section 6.3(a)(ii) Non-JV Space Section 3.3(b) Non-NAND Products Section 3.2(b)(iv) Non-Originating Party Section 6.6(e) Originating Party Section 6.6(e) Parties Heading Phase I Section 3.3 [***] Section 6.7(a)(i)(B) Phase I Investing Party Section 6.3(a)(i) Phase I Minimum RUP Commitment Section 6.3(a)(i) [***] Section 6.3(a)(i) Phase II Section 3.3 [***] Section 6.7(a)(ii) Phase II Construction Plan Notice Section 6.7(a)(i)(A) Phase II Investing Party Section 6.3(a)(ii) Phase II Minimum RUP Commitment Section 6.3(a)(ii) Phase II Non-Investing Party Section 6.3(a)(ii) Process Technology Section 6.2(a) Product Development Agreement Section 2.1(c)(ii) Proposal Section 6.3(c)(i) Proprietary NAND Flash Memory Products Section 6.6(d) Purchased Capacity Section 6.7(c) Qualification Wafers Section 6.8(a)(v) R/W Section 3.2(b)(iii) Requesting Party Section 9.1(d)(i) Reservation Option Section 6.7(a) Reservation Payment Section 6.7(b) Restructuring Costs Section 9.1(j)(ii)(B) RMPA Section 2.1(c)(x) SanDisk Heading SanDisk Corporation Heading SanDisk Engineers Section 6.10(a)(ii) SanDisk Financing Section 6.12(b)(iii) SanDisk Flash Heading SanDisk Flash-Flash Forward Services Agreement Section 2.1(b)(xi) SanDisk Foundry Agreement Section 2.1(c)(vii) SanDisk Purchase and Supply Agreement Section 2.1(b)(v) [***] Section 3.3(b)(ii) [***] Section 3.3(b)(ii) SanDisk Share Section 9.1(j)(ii)(A) SanDisk Team Section 6.10(b) Selling Party Section 9.1(d) Shortfall Quarter Section 7.3 Start-Up Costs Section 7.1 [***] Section 7.3 Termination Capacity Section 9.1(d)(i) Third Party Sale Section 6.3(a)(iii) Threshold NAND Capacity Ratio Section 7.4(b) Toshiba Heading Toshiba Engineers Section 6.10(a)(ii) Toshiba Financing Section 6.12(b)(iii) [***] Section 3.3(b)(i) [***] Section 3.3(b)(i) Toshiba Purchase and Supply Agreement Section 2.1(b)(v) Toshiba’s Cost of Debt Section 8.2(b) Toshiba-Flash Forward Services Agreement Section 2.1(b)(x) Toshiba-SanDisk Flash Services Agreement Section 2.1(b)(ix) Trailing Party Section 6.7(a) Unilateral Expansion Section 3.3(b)(iii) Unilateral Expansion Space Section 3.3(b)(iii) Variable Manufacturing Costs Section 7.4(a)(ii) Y3 NAND Flash Memory Products Section 3.2(a)(iii) Y3 Ramp-Up Plan Section 6.5(a)(i)(E) Y4 NAND Flash Memory Products Section 3.2(a)(iii) Y4 Ramp-Up Plan Section 6.5(a)(i)(E) Y5 Capacity Ratio Section 7.4(c) Y5 Direct R&D Development Products Section 6.8(a)(iii) Y5 Facility or Y5 Section 3.1 Y5 NAND Capacity Ratio Section 7.4(d) Y5 NAND Flash Memory Products Section 3.2(a)(ii)

Appears in 1 contract

Sources: Master Agreement (Sandisk Corp)

NAND Flash Memory Products. Section 3.2(a)(i) Non-Defaulting Party Section 6.12(d) Non-Engineer SanDisk Team Members Section 6.10(b)(ii) Non-Investing Party Section 6.3(a)(ii) Non-JV Space Section 3.3(b) Non-NAND Products Section 3.2(b)(iv) Non-Originating Party Section 6.6(e) Originating Party Section 6.6(e) Parties Heading Phase I Section 3.3 [***] Section 6.7(a)(i)(B) Phase I Investing Party Section 6.3(a)(i) Phase I Minimum RUP Commitment Section 6.3(a)(i) [***] Section 6.3(a)(i) Phase II Section 3.3 [***] Section 6.7(a)(ii) Phase II Construction Plan Notice Section 6.7(a)(i)(A) Phase II Investing Party Section 6.3(a)(ii) Phase II Minimum RUP Commitment Section 6.3(a)(ii) Phase II Non-Investing Party Section 6.3(a)(ii) Process Technology Section 6.2(a) Product Development Agreement Section 2.1(c)(ii) Proposal Section 6.3(c)(i) Proprietary NAND Flash Memory Products Section 6.6(d) Purchased Capacity Section 6.7(c) Qualification Wafers Section 6.8(a)(v) R/W Section 3.2(b)(iii) Requesting Party Section 9.1(d)(i) Reservation Option Section 6.7(a) Reservation Payment Section 6.7(b) Restructuring Costs Section 9.1(j)(ii)(B) RMPA Section 2.1(c)(x) SanDisk Heading SanDisk Corporation Heading SanDisk Engineers Section 6.10(a)(ii) SanDisk Financing Section 6.12(b)(iii) SanDisk Flash Heading SanDisk Flash-Flash Forward Services Agreement Section 2.1(b)(xi) SanDisk Foundry Agreement Section 2.1(c)(vii) SanDisk Purchase and Supply Agreement Section 2.1(b)(v) [***] Section 3.3(b)(ii) [***] Section 3.3(b)(ii) SanDisk Share Section 9.1(j)(ii)(A) SanDisk Team Section 6.10(b) Selling Party Section 9.1(d) Shortfall Quarter Section 7.3 Start-Up Costs Section 7.1 [***] Section 7.3 Termination Capacity Section 9.1(d)(i) Third Party Sale Section 6.3(a)(iii) Threshold NAND Capacity Ratio Section 7.4(b) Toshiba Heading Toshiba Engineers Section 6.10(a)(ii) Toshiba Financing Section 6.12(b)(iii) [***] Section 3.3(b)(i) [***] Section 3.3(b)(i) Toshiba Purchase and Supply Agreement Section 2.1(b)(v) Toshiba’s Cost of Debt Section 8.2(b) Toshiba-Flash Forward Services Agreement Section 2.1(b)(x) Toshiba-SanDisk Flash Services Agreement Section 2.1(b)(ix) Trailing Party Section 6.7(a) Unilateral Expansion Section 3.3(b)(iii) Unilateral Expansion Space Section 3.3(b)(iii) Variable Manufacturing Costs Section 7.4(a)(ii) Y3 NAND Flash Memory Products Section 3.2(a)(iii) Y3 Ramp-Up Plan Section 6.5(a)(i)(E) Y4 NAND Flash Memory Products Section 3.2(a)(iii) Y4 Ramp-Up Plan Section 6.5(a)(i)(E) Y5 Capacity ▇▇ ▇▇▇▇▇▇▇▇ Ratio Section 7.4(c) Y5 Direct R&D Development Products Section 6.8(a)(iii) Y5 Facility or Y5 Section 3.1 Y5 NAND Capacity Ratio Section 7.4(d) Y5 NAND Flash Memory Products Section 3.2(a)(ii)

Appears in 1 contract

Sources: Master Agreement (Western Digital Corp)